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FF650R17IE4DP_B2

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FF650R17IE4DP_B2 Image

The FF650R17IE4DP_B2 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2 to 3 V, DC Collector Current 650 A, Peak Collector Current 1300 A, DC Forward Current 650 A. More details for FF650R17IE4DP_B2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FF650R17IE4DP_B2
  • Manufacturer
    Infineon Technologies
  • Description
    1700 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2 to 3 V
  • DC Collector Current
    650 A
  • Peak Collector Current
    1300 A
  • DC Forward Current
    650 A
  • Peak Forward Current
    1300 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    0.02 W
  • Package
    AG-PRIME2
  • Package Type
    Chassis Mount
  • Applications
    Traction drives, Wind Drives
  • RoHS Compliant
    Yes

Technical Documents
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