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FF650R17IE4V

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FF650R17IE4V

Product Specifications

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Product Details

  • Part Number
    FF650R17IE4V
  • Manufacturer
    Infineon Technologies
  • Description
    1700 V, Dual Switch IGBT Module

General

  • Types
    Dual Switch IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2 to 2.80 V
  • DC Collector Current
    650 A
  • Peak Collector Current
    1300 A
  • DC Forward Current
    650 A
  • Peak Forward Current
    1300 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    4150 W
  • Package
    AG-PRIME2
  • Package Type
    Chassis Mount
  • Applications
    Commercial Agriculture Vehicles
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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