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FF75R12RT4

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FF75R12RT4 Image

The FF75R12RT4 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.85 to 2.25 V, DC Collector Current 75 A, Peak Collector Current 150 W, DC Forward Current 75 A. More details for FF75R12RT4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FF75R12RT4
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.85 to 2.25 V
  • DC Collector Current
    75 A
  • Peak Collector Current
    150 W
  • DC Forward Current
    75 A
  • Peak Forward Current
    150 W
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    395 W
  • Package
    AG-34MM
  • Package Type
    Chassis Mount
  • Applications
    High power converters, UPS Systems, Moter Drives
  • RoHS Compliant
    Yes

Technical Documents
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