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FF900R12IE4VP

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FF900R12IE4VP Image

The FF900R12IE4VP from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.75 to 2.50 V, DC Collector Current 900 A, Peak Collector Current 1800 A, DC Forward Current 900 A. More details for FF900R12IE4VP can be seen below.

Product Specifications

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Product Details

  • Part Number
    FF900R12IE4VP
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.75 to 2.50 V
  • DC Collector Current
    900 A
  • Peak Collector Current
    1800 A
  • DC Forward Current
    900 A
  • Peak Forward Current
    1800 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    0.02 W
  • Package
    AG-PRIME2
  • Package Type
    Chassis Mount
  • Applications
    Commercial Agriculture Vehicles, Traction drives
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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