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FS100R12N2T4P

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FS100R12N2T4P Image

The FS100R12N2T4P from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.75 to 2.10 V, DC Collector Current 100 A, Peak Collector Current 200 A, DC Forward Current 100 A. More details for FS100R12N2T4P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS100R12N2T4P
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.75 to 2.10 V
  • DC Collector Current
    100 A
  • Peak Collector Current
    200 A
  • DC Forward Current
    100 A
  • Peak Forward Current
    200 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    0.02 W
  • Package
    AG-ECONO2
  • Package Type
    Chassis Mount
  • Applications
    Auxiliary inverters, Motor drives, Servo Drives
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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