1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. FS200R12PT4P

FS200R12PT4P

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

FS200R12PT4P Image

The FS200R12PT4P from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.75 to 2.15 V, DC Collector Current 200 A, Peak Collector Current 400 A, DC Forward Current 200 A. More details for FS200R12PT4P can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FS200R12PT4P
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.75 to 2.15 V
  • DC Collector Current
    200 A
  • Peak Collector Current
    400 A
  • DC Forward Current
    200 A
  • Peak Forward Current
    400 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    0.02 W
  • Package
    AG-ECONO4
  • Package Type
    Chassis Mount
  • Applications
    High power converters, UPS Systems, Moter Drives
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products