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FS225R12OE4P

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FS225R12OE4P Image

The FS225R12OE4P from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.85 to 2.15 V, DC Collector Current 225 A, Peak Collector Current 450 A, DC Forward Current 225 A. More details for FS225R12OE4P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS225R12OE4P
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.85 to 2.15 V
  • DC Collector Current
    225 A
  • Peak Collector Current
    450 A
  • DC Forward Current
    225 A
  • Peak Forward Current
    450 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    0.02 W
  • Package
    AG-ECONOPP
  • Package Type
    Chassis Mount
  • Applications
    Elevators, Commercial Agriculture Vehicles, High power converters, UPS Systems, Moter Drives, Wind turbines
  • RoHS Compliant
    Yes

Technical Documents
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