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FS225R17OE4

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FS225R17OE4 Image

The FS225R17OE4 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.95 to 2.45 V, DC Collector Current 225 A, Peak Collector Current 450 A, DC Forward Current 225 A. More details for FS225R17OE4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS225R17OE4
  • Manufacturer
    Infineon Technologies
  • Description
    1700 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.95 to 2.45 V
  • DC Collector Current
    225 A
  • Peak Collector Current
    450 A
  • DC Forward Current
    225 A
  • Peak Forward Current
    450 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    1450 W
  • Package
    AG-ECONOPP
  • Package Type
    Chassis Mount
  • Applications
    Auxiliary inverters, High power converters, Moter Drives, Wind turbines
  • RoHS Compliant
    Yes

Technical Documents
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