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FS25R12KE3G

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FS25R12KE3G Image

The FS25R12KE3G from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.70 to 2.15 V, DC Collector Current 25 A, Peak Collector Current 50 A, DC Forward Current 25 A. More details for FS25R12KE3G can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS25R12KE3G
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Hex Channel IGBT Module

General

  • Types
    Hex Channel IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.70 to 2.15 V
  • DC Collector Current
    25 A
  • Peak Collector Current
    50 A
  • DC Forward Current
    25 A
  • Peak Forward Current
    50 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    145 W
  • Package
    AG-ECONO2B
  • Package Type
    Chassis Mount
  • Applications
    Auxiliary inverters, Air conditioning, Motor drives, Servo Drives, UPS systems
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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