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FS25R12W1T4

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FS25R12W1T4 Image

The FS25R12W1T4 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.85 to 2.25 V, DC Collector Current 25 A, Peak Collector Current 50 A, DC Forward Current 25 A. More details for FS25R12W1T4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS25R12W1T4
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.85 to 2.25 V
  • DC Collector Current
    25 A
  • Peak Collector Current
    50 A
  • DC Forward Current
    25 A
  • Peak Forward Current
    50 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    205 W
  • Package
    AG-EASY1B
  • Package Type
    Chassis Mount
  • Applications
    Air conditioning, Motor drives, Servo Drives, UPS systems
  • RoHS Compliant
    Yes

Technical Documents
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