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FS300R12OE4_B81

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FS300R12OE4_B81 Image

The FS300R12OE4_B81 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.76 to 2.10 V, DC Collector Current 300 A, Peak Collector Current 1200 A, DC Forward Current 300 A. More details for FS300R12OE4_B81 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS300R12OE4_B81
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.76 to 2.10 V
  • DC Collector Current
    300 A
  • Peak Collector Current
    1200 A
  • DC Forward Current
    300 A
  • Peak Forward Current
    1200 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    0.02 W
  • Package
    AG-ECONOPP
  • Package Type
    Chassis Mount
  • Applications
    Elevators, Commercial Agriculture Vehicles, High power converters, UPS Systems, Moter Drives, Wind turbines
  • RoHS Compliant
    Yes

Technical Documents
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