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FS300R12OE4P

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FS300R12OE4P Image

The FS300R12OE4P from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.75 to 2.10 V, DC Collector Current 300 A, Peak Collector Current 600 A, DC Forward Current 300 A. More details for FS300R12OE4P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS300R12OE4P
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.75 to 2.10 V
  • DC Collector Current
    300 A
  • Peak Collector Current
    600 A
  • DC Forward Current
    300 A
  • Peak Forward Current
    600 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    0.02 W
  • Package
    AG-ECONOPP
  • Package Type
    Chassis Mount
  • Applications
    High power converters, Commercial Agriculture Vehicles, UPS Systems, Moter Drives, Solar applications
  • RoHS Compliant
    Yes

Technical Documents
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