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FS35R12KE3G

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FS35R12KE3G Image

The FS35R12KE3G from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.70 to 2.15 V, DC Collector Current 35 A, Peak Collector Current 70 A, DC Forward Current 35 A. More details for FS35R12KE3G can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS35R12KE3G
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Hex Channel IGBT Module

General

  • Types
    Hex Channel IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.70 to 2.15 V
  • DC Collector Current
    35 A
  • Peak Collector Current
    70 A
  • DC Forward Current
    35 A
  • Peak Forward Current
    70 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    200 W
  • Package
    AG-ECONO2B
  • Package Type
    Chassis Mount
  • RoHS Compliant
    Yes

Technical Documents
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