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FS500R17OE4DP

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FS500R17OE4DP Image

The FS500R17OE4DP from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.95 to 2.45 V, DC Collector Current 500 A, Peak Collector Current 1000 A, DC Forward Current 500 A. More details for FS500R17OE4DP can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS500R17OE4DP
  • Manufacturer
    Infineon Technologies
  • Description
    1700 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.95 to 2.45 V
  • DC Collector Current
    500 A
  • Peak Collector Current
    1000 A
  • DC Forward Current
    500 A
  • Peak Forward Current
    1000 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    0.02 W
  • Package
    AG-ECONOPP
  • Package Type
    Chassis Mount
  • Applications
    Auxiliary inverters, High power converters, Moter Drives, Wind turbines
  • RoHS Compliant
    Yes

Technical Documents
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