1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. FS50R07W1E3_B11A

FS50R07W1E3_B11A

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

FS50R07W1E3_B11A Image

The FS50R07W1E3_B11A from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.45 to 1.90 V, DC Collector Current 50 A, Peak Collector Current 100 A, DC Forward Current 50 A. More details for FS50R07W1E3_B11A can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FS50R07W1E3_B11A
  • Manufacturer
    Infineon Technologies
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.45 to 1.90 V
  • DC Collector Current
    50 A
  • Peak Collector Current
    100 A
  • DC Forward Current
    50 A
  • Peak Forward Current
    100 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    205 W
  • Package Type
    Chassis Mount
  • Applications
    Hybrid Electrical Vehicles (H)EV, Air Conditioning, Motor Drives
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products