1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. FS50R12KE3

FS50R12KE3

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

FS50R12KE3 Image

The FS50R12KE3 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.70 to 2.15 V, DC Collector Current 50 A, Peak Collector Current 100 A, DC Forward Current 50 A. More details for FS50R12KE3 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FS50R12KE3
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Hex Channel IGBT Module

General

  • Types
    Hex Channel IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.70 to 2.15 V
  • DC Collector Current
    50 A
  • Peak Collector Current
    100 A
  • DC Forward Current
    50 A
  • Peak Forward Current
    100 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    270 W
  • Package
    AG-ECONO2B
  • Package Type
    Chassis Mount
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products