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FS50R12KT3

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FS50R12KT3 Image

The FS50R12KT3 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.70 to 2.15 V, DC Collector Current 50 A, Peak Collector Current 100 A, DC Forward Current 50 A. More details for FS50R12KT3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS50R12KT3
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.70 to 2.15 V
  • DC Collector Current
    50 A
  • Peak Collector Current
    100 A
  • DC Forward Current
    50 A
  • Peak Forward Current
    100 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    280 A
  • Package
    AG-ECONO2B
  • Package Type
    Chassis Mount
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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