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FS650R08A4P2

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The FS650R08A4P2 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.10 to 1.45 V, DC Collector Current 650 A, Peak Collector Current 1300 A, DC Forward Current 650 A. More details for FS650R08A4P2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS650R08A4P2
  • Manufacturer
    Infineon Technologies
  • Description
    750 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.10 to 1.45 V
  • DC Collector Current
    650 A
  • Peak Collector Current
    1300 A
  • DC Forward Current
    650 A
  • Peak Forward Current
    1300 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    750 V
  • Power Dissipation
    488 W
  • Package Type
    Chassis Mount
  • Applications
    Automotive Applications, Hybrid Electrical Vehicles (H)EV, Commercial Agriculture Vehicles, Motor Drives
  • RoHS Compliant
    Yes

Technical Documents
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