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FS660R08A6P2FB

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FS660R08A6P2FB Image

The FS660R08A6P2FB from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.10 to 1.45 V, DC Collector Current 660 A, Peak Collector Current 1320 A, DC Forward Current 660 A. More details for FS660R08A6P2FB can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS660R08A6P2FB
  • Manufacturer
    Infineon Technologies
  • Description
    750 V, Hex Switch IGBT Module

General

  • Types
    Hex Channel IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.10 to 1.45 V
  • DC Collector Current
    660 A
  • Peak Collector Current
    1320 A
  • DC Forward Current
    660 A
  • Peak Forward Current
    1320 A
  • Collector Emitter Voltage
    750 V
  • RoHS Compliant
    Yes

Technical Documents
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