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FS75R12KE3_B9

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FS75R12KE3_B9 Image

The FS75R12KE3_B9 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.70 to 2.15 V, DC Collector Current 75 A, Peak Collector Current 150 A, DC Forward Current 75 A. More details for FS75R12KE3_B9 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS75R12KE3_B9
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Hex Channel IGBT Module

General

  • Types
    Hex Channel IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.70 to 2.15 V
  • DC Collector Current
    75 A
  • Peak Collector Current
    150 A
  • DC Forward Current
    75 A
  • Peak Forward Current
    150 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    355 W
  • Package
    AG-ECONO2B
  • Package Type
    Chassis Mount
  • RoHS Compliant
    Yes

Technical Documents
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