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FS75R12W2T7

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FS75R12W2T7 Image

The FS75R12W2T7 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.55 to 1.77 V, DC Collector Current 75 A, Peak Collector Current 150 A, DC Forward Current 75 A. More details for FS75R12W2T7 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS75R12W2T7
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.55 to 1.77 V
  • DC Collector Current
    75 A
  • Peak Collector Current
    150 A
  • DC Forward Current
    75 A
  • Peak Forward Current
    150 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    0.02 W
  • Package
    AG-EASY2B
  • Package Type
    Chassis Mount
  • Applications
    Auxiliary inverters, Air conditioning, Motor drives, Servo Drives, UPS systems
  • RoHS Compliant
    Yes

Technical Documents
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