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FS770R08A6P2B

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The FS770R08A6P2B from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.10 to 1.44 V, DC Collector Current 770 A, Peak Collector Current 1540 A, DC Forward Current 770 A. More details for FS770R08A6P2B can be seen below.

Product Specifications

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Product Details

  • Part Number
    FS770R08A6P2B
  • Manufacturer
    Infineon Technologies
  • Description
    750 V, Hex Switch IGBT Module

General

  • Types
    Hex Channel IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.10 to 1.44 V
  • DC Collector Current
    770 A
  • Peak Collector Current
    1540 A
  • DC Forward Current
    770 A
  • Peak Forward Current
    1540 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    750 V
  • Power Dissipation
    654 W
  • Package Type
    Chassis Mount
  • Applications
    Automotive Applications, Hybrid Electrical Vehicles (H)EV, Commercial Agriculture Vehicles, Motor Drives
  • RoHS Compliant
    Yes

Technical Documents
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