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FZ1000R33HE3

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FZ1000R33HE3 Image

The FZ1000R33HE3 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.55 to 3.45 V, DC Collector Current 1000 A, Peak Collector Current 2000 A, DC Forward Current 1000 A. More details for FZ1000R33HE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FZ1000R33HE3
  • Manufacturer
    Infineon Technologies
  • Description
    3300 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.55 to 3.45 V
  • DC Collector Current
    1000 A
  • Peak Collector Current
    2000 A
  • DC Forward Current
    1000 A
  • Peak Forward Current
    2000 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    3300 V
  • Package
    AG-IHVB130
  • Package Type
    Chassis Mount
  • Applications
    Chopper applications, Medium voltage converters, Motor drives, Traction drives, UPS systems, Wind turbines
  • RoHS Compliant
    Yes

Technical Documents
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