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FZ1200R12HE4P

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FZ1200R12HE4P Image

The FZ1200R12HE4P from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.75 to 2.45 V, DC Collector Current 1200 A, Peak Collector Current 2400 A, DC Forward Current 1200 A. More details for FZ1200R12HE4P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FZ1200R12HE4P
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.75 to 2.45 V
  • DC Collector Current
    1200 A
  • Peak Collector Current
    2400 A
  • DC Forward Current
    1200 A
  • Peak Forward Current
    2400 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Package
    AG-IHMB130
  • Package Type
    Chassis Mount
  • Applications
    High power converters, Moter Drives
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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