1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. FZ1400R33HE4

FZ1400R33HE4

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

FZ1400R33HE4 Image

The FZ1400R33HE4 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.30 to 2.90 V, DC Collector Current 1400 A, Peak Collector Current 2800 A, DC Forward Current 1400 A. More details for FZ1400R33HE4 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FZ1400R33HE4
  • Manufacturer
    Infineon Technologies
  • Description
    3300 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.30 to 2.90 V
  • DC Collector Current
    1400 A
  • Peak Collector Current
    2800 A
  • DC Forward Current
    1400 A
  • Peak Forward Current
    2800 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    3300 V
  • Package
    AG-IHVB130
  • Package Type
    Chassis Mount
  • Applications
    Active frontend(energy recovery), High power converters, Commercial Agriculture Vehicles, Medium voltage converters, Motor drives, Traction drives, UPS systems
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products