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FZ1600R33HE4

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The FZ1600R33HE4 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.40 to 3.25 V, DC Collector Current 1600 A, Peak Collector Current 3200 A, DC Forward Current 1600 A. More details for FZ1600R33HE4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FZ1600R33HE4
  • Manufacturer
    Infineon Technologies
  • Description
    3300 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.40 to 3.25 V
  • DC Collector Current
    1600 A
  • Peak Collector Current
    3200 A
  • DC Forward Current
    1600 A
  • Peak Forward Current
    3200 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    3300 V
  • Package
    AG-IHVB130
  • Package Type
    Chassis Mount
  • Applications
    High power converters, Medium voltage converters, Motor drives, Traction drives, UPS systems, Active frontend (energy recovery), Commercial Agriculture Vehicles
  • RoHS Compliant
    Yes

Technical Documents
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