FZ1800R45HL4

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FZ1800R45HL4 Image

The FZ1800R45HL4 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.35 to 3.50 V, DC Collector Current 1800 A, Peak Collector Current 3600 A, DC Forward Current 1800 A. More details for FZ1800R45HL4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FZ1800R45HL4
  • Manufacturer
    Infineon Technologies
  • Description
    4500 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Triple
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.35 to 3.50 V
  • DC Collector Current
    1800 A
  • Peak Collector Current
    3600 A
  • DC Forward Current
    1800 A
  • Peak Forward Current
    3600 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    4500 V
  • Package
    AG-IHVB190
  • Package Type
    Chassis Mount
  • Applications
    Wind turbines, High power converters, Medium voltage converters, Motor drives, UPS systems
  • RoHS Compliant
    Yes

Technical Documents

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