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FZ1800R45HL4_S7

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FZ1800R45HL4_S7 Image

The FZ1800R45HL4_S7 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.15 to 3.15 V, DC Collector Current 1800 A, Peak Collector Current 3600 A, DC Forward Current 1800 A. More details for FZ1800R45HL4_S7 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FZ1800R45HL4_S7
  • Manufacturer
    Infineon Technologies
  • Description
    4500 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Triple
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.15 to 3.15 V
  • DC Collector Current
    1800 A
  • Peak Collector Current
    3600 A
  • DC Forward Current
    1800 A
  • Peak Forward Current
    3600 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    4500 V
  • Package
    AG-IHVB190
  • Package Type
    Chassis Mount
  • Applications
    Wind turbines, High power converters, Medium voltage converters, Motor drives, UPS systems
  • RoHS Compliant
    Yes

Technical Documents
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