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FZ2000R33HE4

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The FZ2000R33HE4 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.20 to 2.80 V, DC Collector Current 2000 A, Peak Collector Current 4000 A, DC Forward Current 2000 A. More details for FZ2000R33HE4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FZ2000R33HE4
  • Manufacturer
    Infineon Technologies
  • Description
    3300 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Triple
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.20 to 2.80 V
  • DC Collector Current
    2000 A
  • Peak Collector Current
    4000 A
  • DC Forward Current
    2000 A
  • Peak Forward Current
    4000 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    3300 V
  • Package
    AG-IHVB190
  • Package Type
    Chassis Mount
  • Applications
    Active frontend(energy recovery), High power converters, Commercial Agriculture Vehicles, Medium voltage converters, Motor drives, Traction drives, UPS systems
  • RoHS Compliant
    Yes

Technical Documents
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