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FZ750R65KE3

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FZ750R65KE3 Image

The FZ750R65KE3 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3 to 4.20 V, DC Collector Current 750 A, Peak Collector Current 1500 A, DC Forward Current 750 A. More details for FZ750R65KE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FZ750R65KE3
  • Manufacturer
    Infineon Technologies
  • Description
    6500 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3 to 4.20 V
  • DC Collector Current
    750 A
  • Peak Collector Current
    1500 A
  • DC Forward Current
    750 A
  • Peak Forward Current
    1500 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    6500 V
  • Power Dissipation
    3000000 W
  • Package
    A-IHV190
  • Package Type
    Chassis Mount
  • Applications
    Medium voltage converters, Traction drives
  • RoHS Compliant
    Yes

Technical Documents
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