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FZ825R33HE4D

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FZ825R33HE4D Image

The FZ825R33HE4D from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.40 to 3.28 V, DC Collector Current 825 A, Peak Collector Current 1650 A, DC Forward Current 825 A. More details for FZ825R33HE4D can be seen below.

Product Specifications

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Product Details

  • Part Number
    FZ825R33HE4D
  • Manufacturer
    Infineon Technologies
  • Description
    3300 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.40 to 3.28 V
  • DC Collector Current
    825 A
  • Peak Collector Current
    1650 A
  • DC Forward Current
    825 A
  • Peak Forward Current
    1650 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    3300 V
  • Package
    AG-IHVB130
  • Package Type
    Chassis Mount
  • Applications
    High power converters, Medium voltage converters, Motor drives, Traction drives, UPS systems, Active frontend (energy recovery), Commercial Agriculture Vehicles
  • RoHS Compliant
    Yes

Technical Documents
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