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FZ900R12KP4

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FZ900R12KP4 Image

The FZ900R12KP4 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.70 to 2.10 V, DC Collector Current 900 A, Peak Collector Current 1800 A, DC Forward Current 900 A. More details for FZ900R12KP4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FZ900R12KP4
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.70 to 2.10 V
  • DC Collector Current
    900 A
  • Peak Collector Current
    1800 A
  • DC Forward Current
    900 A
  • Peak Forward Current
    1800 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Package
    AG-62MM
  • Package Type
    Chassis Mount
  • Applications
    High power converters, UPS Systems, Moter Drives, Wind turbines
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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