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IGC99T120T8RH

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The IGC99T120T8RH from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.48 to 1.92 V, DC Collector Current 100 A, Junction Temperature -40 to 175 Degree C, Gate Emitter Leakage Current 0.12 uA. More details for IGC99T120T8RH can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGC99T120T8RH
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    9.5 x 10.39 mm
  • Saturated Collector Emitter Voltage
    1.48 to 1.92 V
  • DC Collector Current
    100 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    0.12 uA
  • Collector Emitter Voltage
    1200 V
  • Package Type
    Die
  • Applications
    Medium / high power drives
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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