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IGC99T120T8RQ

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The IGC99T120T8RQ from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.78 to 2.42 V, DC Collector Current 100 A, Junction Temperature -40 to 175 Degree C, Gate Emitter Leakage Current 0.12 uA. More details for IGC99T120T8RQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGC99T120T8RQ
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    9.50 x 10.50 mm
  • Saturated Collector Emitter Voltage
    1.78 to 2.42 V
  • DC Collector Current
    100 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    0.12 uA
  • Collector Emitter Voltage
    1200 V
  • Package Type
    Die
  • Applications
    High frequency drives, Uninterruptible power supplies, Welding, Solar inverters
  • RoHS Compliant
    Yes

Technical Documents
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