1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. IKFW90N65ES5

IKFW90N65ES5

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IKFW90N65ES5 Image

The IKFW90N65ES5 from Infineon Technologies is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.42 to 1.75 V, DC Collector Current 94 V, Peak Collector Current 77 to 134 A, DC Forward Current 74 to 80 A. More details for IKFW90N65ES5 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IKFW90N65ES5
  • Manufacturer
    Infineon Technologies
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.42 to 1.75 V
  • DC Collector Current
    94 V
  • Peak Collector Current
    77 to 134 A
  • DC Forward Current
    74 to 80 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    113 to 154 W
  • Package
    PG-TO247-3-AI
  • Package Type
    Through Hole
  • Applications
    Uninterruptible power supplies, welding converters, converter swith high switching frequency, Resonant converters
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products