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IKW20N60H3

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IKW20N60H3 Image

The IKW20N60H3 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.95 to 2.50 V, DC Collector Current 20 to 40 V, DC Forward Current 10 to 20 A, Gate Emitter Leakage Current 0.1 uA. More details for IKW20N60H3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IKW20N60H3
  • Manufacturer
    Infineon Technologies
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.95 to 2.50 V
  • DC Collector Current
    20 to 40 V
  • DC Forward Current
    10 to 20 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    85 to 170 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Uninterruptible, power, supplies, Welding coverters, mid to high range switching frequency
  • RoHS Compliant
    Yes

Technical Documents
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