The P2000DL45X168 from Infineon Technologies is a Field Stop Trench IGBT. It has a collector-emitter voltage of up to 4500 V, collector-emitter saturation voltage of 2.25 V, and a gate threshold voltage of 6.6 V. This IGBT has a DC collector current of up to 2000 A, a peak collector current of less than 4000 A, and gate-emitter leakage current of 0.23 µA. It has high dynamic robustness with double-sided cooling and power cycling capabilities. This press pack IGBT provides short-circuit capability to protect the circuit against over-voltage or over-current related damages. It is available in a hermetically sealed disc package and is ideal for high-power converters, medium-voltage converters, modular multi-level inverter MMC for HVDC and FACTS, and DC breaker applications.