The SIGC10T60SE from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.05 to 2.05 V, DC Collector Current 20 A, Junction Temperature -40 to 150 Degree C, Gate Emitter Leakage Current 0.3 uA. More details for SIGC10T60SE can be seen below.