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SIGC223T120R2CS

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The SIGC223T120R2CS from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.7 to 3.7 V, DC Collector Current 150 A, Junction Temperature -55 to 150 Degree C, Gate Emitter Leakage Current 0.6 uA. More details for SIGC223T120R2CS can be seen below.

Product Specifications

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Product Details

  • Part Number
    SIGC223T120R2CS
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    14.4 x 15.5 mm
  • Saturated Collector Emitter Voltage
    2.7 to 3.7 V
  • DC Collector Current
    150 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    0.6 uA
  • Collector Emitter Voltage
    1200 V
  • Package Type
    Die
  • Applications
    drives, SMPS, resonant applications
  • RoHS Compliant
    Yes

Technical Documents
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