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SIGC42T120CQ

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SIGC42T120CQ Image

The SIGC42T120CQ from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.1 V, DC Collector Current 25 A, Junction Temperature -40 to 150 Degree C, Gate Emitter Leakage Current 0.12 uA. More details for SIGC42T120CQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    SIGC42T120CQ
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    6.59 x 6.49 mm
  • Saturated Collector Emitter Voltage
    2.1 V
  • DC Collector Current
    25 A
  • Junction Temperature
    -40 to 150 Degree C
  • Gate Emitter Leakage Current
    0.12 uA
  • Collector Emitter Voltage
    1200 V
  • Package Type
    Die
  • Applications
    drives, SMPS, resonant applications
  • RoHS Compliant
    Yes

Technical Documents
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