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IXA70I1200NA

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The IXA70I1200NA from Littelfuse is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.8 V, DC Collector Current 100 A, Junction Temperature -40 to 150 Degree C, Gate Emitter Leakage Current 0.5 uA. More details for IXA70I1200NA can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXA70I1200NA
  • Manufacturer
    Littelfuse
  • Description
    1200 V Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.8 V
  • DC Collector Current
    100 A
  • Junction Temperature
    -40 to 150 Degree C
  • Gate Emitter Leakage Current
    0.5 uA
  • Operating Temperature
    -40 to 125 Degree C
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    350 W
  • Package
    SOT 227B
  • Package Type
    Chassis Mount, Surface Mount
  • Applications
    AC motor drives, Solar inverter, Medical equipment, Uninterruptible power supply, Air-conditioning systems, Welding equipment, Switched-mode and resonant-mode power supplies, Inductive heating, cookers, Pumps, Fans
  • RoHS Compliant
    Yes

Technical Documents
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