IXBH16N170

Note : Your request will be directed to Littelfuse.

IXBH16N170 Image

The IXBH16N170 from Littelfuse is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3.3 V, DC Collector Current 16 A, Junction Temperature -55 to 150 Degree C, Gate Emitter Leakage Current -0.1 to 0.1 uA. More details for IXBH16N170 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IXBH16N170
  • Manufacturer
    Littelfuse
  • Description
    1700 V Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3.3 V
  • DC Collector Current
    16 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    -0.1 to 0.1 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    250 W
  • Package
    TO 247
  • Package Type
    Through Hole
  • Applications
    switched mode power supplies, DC-DC converters, resonant converters, lamp ballasts, laser generators, x ray generators

Technical Documents

Latest IGBTs

View more products