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IXBR42N170

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IXBR42N170 Image

The IXBR42N170 from Littelfuse is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.9 V, DC Collector Current 32 A, Junction Temperature -55 to 150 Degree C, Gate Emitter Leakage Current -0.1 to 0.1 uA. More details for IXBR42N170 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXBR42N170
  • Manufacturer
    Littelfuse
  • Description
    1700 V Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.9 V
  • DC Collector Current
    32 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    -0.1 to 0.1 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    200 W
  • Package
    TO 247
  • Package Type
    Through Hole
  • Applications
    Switch-Mode and Resonant-Mode Power Supplies, Uninterruptible Power Supplies (UPS), Laser Generators, Capacitor Discharge Circuits, AC Switches

Technical Documents
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