Note : Your request will be directed to Littelfuse.
The IXBT10N170 from Littelfuse is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3.8 V, DC Collector Current 20 A, Collector Emitter Voltage 1700 V. More details for IXBT10N170 can be seen below.
650 V Insulated Gate Bipolar Transistor
1200 V IGBT Power Module
650 V Field-Stop Trench IGBT
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