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IXD75IF650NA

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IXD75IF650NA Image

The IXD75IF650NA from Littelfuse is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.5 V, DC Collector Current 75 A, Junction Temperature -40 to 175 Degree C, Gate Emitter Leakage Current 0.5 uA. More details for IXD75IF650NA can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXD75IF650NA
  • Manufacturer
    Littelfuse
  • Description
    650 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.5 V
  • DC Collector Current
    75 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    0.5 uA
  • Collector Emitter Voltage
    650 V
  • Package
    SOT 227B
  • Package Type
    Chassis Mount, Surface Mount
  • Applications
    Solar inverter, Medical equipment, Uninerruptible power supply, Air-conditioning system, Welding equipment, Switched-mode and resonant-mode power supplies, Inductive heating, cookers, Pumps, Fans
  • RoHS Compliant
    Yes

Technical Documents
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