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IXDN 75N120

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The IXDN 75N120 from Littelfuse is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.2 V, DC Collector Current 150 A, Junction Temperature -40 to 150 Degree C, Gate Emitter Leakage Current -0.5 to 0.5 uA. More details for IXDN 75N120 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXDN 75N120
  • Manufacturer
    Littelfuse
  • Description
    1200 V Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.2 V
  • DC Collector Current
    150 A
  • Junction Temperature
    -40 to 150 Degree C
  • Gate Emitter Leakage Current
    -0.5 to 0.5 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    660 W
  • Package
    SOT 227 B
  • Package Type
    Chassis Mount, Surface Mount
  • Applications
    AC motor speed control, DC servo and robot drives, DC choppers, Uninteruptible power supplies (UPS, Switch-mode and resonant-mode power supplies

Technical Documents
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