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IXDP35N60B

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IXDP35N60B Image

The IXDP35N60B from Littelfuse is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.1 V, DC Collector Current 60 A, Junction Temperature -55 to 150 Degree C, Gate Emitter Leakage Current -0.5 to 0.5 uA. More details for IXDP35N60B can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXDP35N60B
  • Manufacturer
    Littelfuse
  • Description
    600 V Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.1 V
  • DC Collector Current
    60 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    -0.5 to 0.5 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    250 W
  • Package
    TO 247 AD
  • Package Type
    Through Hole
  • Applications
    AC motor speed control, DC servo and robot drives, DC choppers, Uninteruptible power supplies (UPS, Switch-mode and resonant-mode power supplies

Technical Documents
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