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IXGF32N170

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IXGF32N170 Image

The IXGF32N170 from Littelfuse is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3.5 V, DC Collector Current 19 to 44 A, Junction Temperature -55 to 150 Degree C, Gate Emitter Leakage Current -0.1 to 0.1 uA. More details for IXGF32N170 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXGF32N170
  • Manufacturer
    Littelfuse
  • Description
    1700 V Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3.5 V
  • DC Collector Current
    19 to 44 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    -0.1 to 0.1 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    200 W
  • Package Type
    Through Hole
  • Applications
    Capacitor Discharge & Pulser Circuits, AC Motor Drives, Uninterruptible Power Supplies (UPS), Switched-Mode and Resonant-Mode Power Supplies

Technical Documents
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