IXGN100N170

IGBT by Littelfuse (622 more products)

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The IXGN100N170 from Littelfuse is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3 V, DC Collector Current 95 A, Junction Temperature -55 to 150 Degree C, Gate Emitter Leakage Current -0.2 to 0.2 uA. More details for IXGN100N170 can be seen below.

Product Specifications

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Product Details

Part Number
IXGN100N170
Manufacturer
Littelfuse
Description
1700 V Single Switch IGBT Module

General

Types

Single Switch IGBT
No. of Transistors

Single
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

3 V
DC Collector Current

95 A
Junction Temperature

-55 to 150 Degree C
Gate Emitter Leakage Current

-0.2 to 0.2 uA
Collector Emitter Voltage

1700 V
Power Dissipation

735 W
Package

TO 227
Package Type

Chassis Mount
Applications

Power Inverters, UPS, Motor Drives, SMPS, PFC Circuits, Welding Machines