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IXGT 10N170A

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The IXGT 10N170A from Littelfuse is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 6 V, DC Collector Current 10 A, Junction Temperature -55 to 150 Degree C, Gate Emitter Leakage Current -0.1 to 0.1 uA. More details for IXGT 10N170A can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXGT 10N170A
  • Manufacturer
    Littelfuse
  • Description
    1700 V Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    6 V
  • DC Collector Current
    10 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    -0.1 to 0.1 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    140 W
  • Package
    TO 268S
  • Package Type
    Surface Mount
  • Applications
    Capacitor Discharge & Pulser Circuits, AC Motor Drives, Uninterruptible Power Supplies (UPS), Switched-Mode and Resonant-Mode Power Supplies

Technical Documents
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